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1

Insight into traps at Al2O3/p-GaN metal-oxide-semiconductor interface fabricated on free-standing GaN substrate

Sang, Liwen, Ren, Bing, Nabatame, Toshihide, Sumiya, Masatomo, Liao, Meiyong

Journal:

Journal of Alloys and Compounds

Année:

2021

Fichier:

PDF, 1.60 MB

2021

2

Development of a new laser heating system for thin film growth by chemical vapor deposition

Fujimoto, Eiji, Sumiya, Masatomo, Ohnishi, Tsuyoshi, Lippmaa, Mikk, Takeguchi, Masaki, Koinuma, Hideomi, Matsumoto, Yuji

Journal:

Review of Scientific Instruments

Année:

2012

Langue:

english

Fichier:

PDF, 1.35 MB

english, 2012

3

Direct Carbothermic Silica Reduction from Purified Silica to Solar-Grade Silicon

Itaka, Kenji, Ogasawara, Takuya, Boucetta, Abderahmane, Benioub, Rabie, Sumiya, Masatomo, Hashimoto, Takuya, Koinuma, Hideomi, Furuya, Yasubumi

Journal:

Journal of Physics Conference Series

Année:

2015

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2015

4

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Zhang, Kexiong, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Sang, Liwen

Journal:

Scientific Reports

Année:

2016

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2016

5

Fabrication of Cu 2 ZnSnS 4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization

Nakayasu, Yuta, Tomai, Takaaki, Oka, Nobuto, Shojiki, Kanako, Kuboya, Shigeyuki, Katayama, Ryuji, Sang, Liwen, Sumiya, Masatomo, Honma, Itaru

Journal:

Thin Solid Films

Année:

2017

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2017

6

Effect of treatments of sapphire substrate on growth of GaN film

Masatomo Sumiya, Shunro Fuke

Journal:

Applied Surface Science

Année:

2005

Langue:

english

Fichier:

PDF, 113 KB

english, 2005

7

Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates

Masatomo Sumiya, Yutaro Kamo, Naoki. Ohashi, Masaki Takeguchi, Yoon-Uk Heo, Hideki Yoshikawa, Shigenori Ueda, Keisuke Kobayashi, Tokuaki Nihashi, Minoru Hagino, Takayuki Nakano, Shunro Fuke

Journal:

Applied Surface Science

Année:

2010

Langue:

english

Fichier:

PDF, 318 KB

english, 2010

8

π-Conjugated polymer/GaN Schottky solar cells

Nobuyuki Matsuki, Yoshihiro Irokawa, Yoshitaka Nakano, Masatomo Sumiya

Journal:

Solar Energy Materials and Solar Cells

Année:

2011

Langue:

english

Fichier:

PDF, 318 KB

english, 2011

9

Reduction of defect density in GaN epilayer having buried Ga metal by MOCVD

Masatomo Sumiya, Youichi Kurumasa, Kohji Ohtsuka, Kazuhiro Kuwahara, Yasushi Takano, Shunro Fuke

Journal:

Journal of Crystal Growth

Année:

2002

Langue:

english

Fichier:

PDF, 267 KB

english, 2002

10

Effect of AlN buffer layer deposition conditions on the properties of GaN layer

Takahiro Ito, Kohji Ohtsuka, Kazuhiro Kuwahara, Masatomo Sumiya, Yasushi Takano, Shunro Fuke

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 246 KB

english, 1999

11

N-polarity GaN on sapphire substrate grown by MOVPE

Takashi Matsuoka, Yasuyuki Kobayashi, Hiroko Takahata, Toshitugu Mitate, Seiichiro Mizuno, Atsushi Sasaki, Mamoru Yoshimoto, Tuyoshi Ohnishi, Masatomo Sumiya

Journal:

physica status solidi (b)

Année:

2006

Langue:

english

Fichier:

PDF, 325 KB

english, 2006

12

Photo-catalysis effect of III-V nitride film

Masatomo Sumiya, Keisuke Ohara, Takeo Ohsawa, Yu. Kawai, Masato Shirai, Shunro Fuke, Hideomi Koinuma, Yuji Matsumoto

Journal:

physica status solidi (c)

Année:

2007

Langue:

english

Fichier:

PDF, 164 KB

english, 2007

13

Anomalous capacitance–voltage characteristics of Pt–AlGaN/GaN Schottky diodes exposed to hydrogen

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 113 KB

english, 2010

14

Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts

Yoshitaka Nakano, Nobuyuki Matsuki, Yoshihiro Irokawa, Masatomo Sumiya

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 157 KB

english, 2010

15

Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy

Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 109 KB

english, 2010

16

Growth of MgxZn1−xO film by MOCVD equipped laser heating system

Seitaro Ito, Masatomo Sumiya, Masahiro Mieno, Hideomi Koinuma

Journal:

Materials Science and Engineering: B

Année:

2010

Langue:

english

Fichier:

PDF, 243 KB

english, 2010

17

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Tsukazaki, Atsushi, Ohtomo, Akira, Onuma, Takeyoshi, Ohtani, Makoto, Makino, Takayuki, Sumiya, Masatomo, Ohtani, Keita, Chichibu, Shigefusa F., Fuke, Syunrou, Segawa, Yusaburou

Journal:

Nature Materials

Année:

2004

Langue:

english

Fichier:

PDF, 423 KB

english, 2004

18

Low-frequency capacitance–voltage study of hydrogen interaction with Pt–AlGaN/GaN Schottky barrier diodes

Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2009

Langue:

english

Fichier:

PDF, 217 KB

english, 2009

19

Study of Defect Levels in the Band Gap for a Thick InGaN Film

Lozac'h, Mickael, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo

Journal:

Japanese Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 725 KB

english, 2012

20

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Sang, Liwen, Liao, Meiyong, Ikeda, Naoki, Koide, Yasuo, Sumiya, Masatomo

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 761 KB

english, 2011

21

High-temperature ultraviolet detection based on InGaN Schottky photodiodes

Sang, Liwen, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1013 KB

english, 2011

22

Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation

Lozac'h, Mickaël, Nakano, Yoshitaka, Sang, Liwen, Sakoda, Kazuaki, Sumiya, Masatomo

Journal:

phys stat sol (a)

Année:

2013

Langue:

english

Fichier:

PDF, 731 KB

english, 2013

23

Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition

Ito, Takahiro, Sumiya, Masatomo, Takano, Yasushi, Ohtsuka, Kohji, Fuke, Shunro

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 296 KB

english, 1999

24

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

Uedono, Akira, Watanabe, Tomohito, Kimura, Shogo, Zhang, Yang, Lozac'h, Mickael, Sang, Liwen, Ishibashi, Shoji, Oshima, Nagayasu, Suzuki, Ryoichi, Sumiya, Masatomo

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 2.57 MB

english, 2013

25

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 818 KB

english, 2014

26

[IEEE 2014 14th International Workshop on Junction Technology (IWJT) - Shanghai, China (2014.5.18-2014.5.20)] 2014 International Workshop on Junction Technology (IWJT) - Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

Uedono, Akira, Fujishima, Tatsuya, Cao, Yu, Joglekar, Sameer, Piedra, Daniel, Lee, Hyung-Seok, Zhang, Yuhao, Zhang, Yang, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnso

Année:

2014

Langue:

english

Fichier:

PDF, 376 KB

english, 2014

27

Vacancy clusters introduced by CF 4 -based plasma treatment in GaN probed with a monoenergetic positron beam

Uedono, Akira, Yoshihara, Nakaaki, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Fujishima, Tatsuya, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Journal:

Applied Physics Express

Année:

2014

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2014

28

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

Uedono, Akira, Fujishima, Tatsuya, Cao, Yu, Zhang, Yang, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 913 KB

english, 2014

29

Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition

Fujimoto, Eiji, Watanabe, Kenji, Matsumoto, Yuji., Koinuma, Hideomi, Sumiya, Masatomo

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 365 KB

english, 2010

30

A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure

Sang, Liwen, Liao, Meiyong, Liang, Qifeng, Takeguchi, Masaki, Dierre, Benjamin, Shen, Bo, Sekiguchi, Takashi, Koide, Yasuo, Sumiya, Masatomo

Journal:

Advanced Materials

Année:

2014

Langue:

english

Fichier:

PDF, 1005 KB

english, 2014

31

Magneto-Optical Spectroscopy of Anatase TiO 2 Doped with Co

Fukumura, Tomoteru, Yamada, Yasuhiro, Tamura, Kentaro, Nakajima, Kiyomi, Aoyama, Toyomi, Tsukazaki, Atsushi, Sumiya, Masatomo, Fuke, Shunro, Segawa, Yusaburo, Chikyow, Toyohiro, Hasegawa, Tetsuya, Koi

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 152 KB

english, 2003

32

In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration superimposed plasma chemical vapor deposition

Naito, Nobuo, Takano, Akihiro, Sumiya, Masatomo, Kawasaki, Masashi, Koinuma, Hideomi

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 329 KB

english, 1995

33

HETEROINTERFACE PROPERTIES OF NOVEL HYBRID SOLAR CELLS CONSISTING OF TRANSPARENT CONDUCTIVE POLYMERS AND III-NITRIDE SEMICONDUCTOR

MATSUKI, NOBUYUKI, NAKANO, YOSHITAKA, IROKAWA, YOSHIHIRO, SUMIYA, MASATOMO

Journal:

Journal of Nonlinear Optical Physics & Materials

Année:

2010

Langue:

english

Fichier:

PDF, 421 KB

english, 2010

34

Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O 3 (111) Substrate by Metalorganic Chemical Vapor Deposition

Sumiya, Masatomo, Chikyow, Toyohiro, Sasahara, Takayuki, Yoshimura, Katsuhiko, Ohta, Jitsuo, Fujioka, Hiroshi, Tagaya, Sumiyoshi, Ikeya, Hirofumi, Koinuma, Hideomi, Fuke, Shunro

Journal:

Japanese Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 413 KB

english, 2002

35

Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy

Sugiyama, Mutsumi, Nosaka, Taiki, Suzuki, Tomonori, Koida, Takashi, Nakajima, Kiyomi, Aoyama, Toyomi, Sumiya, Masatomo, Chikyow, Toyohiro, Uedono, Akira, Chichibu, Shigefusa F.

Journal:

Japanese Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 199 KB

english, 2004

36

Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers

Fujita, Yohei, Takano, Yasushi, Inoue, Yoku, Sumiya, Masatomo, Fuke, Shunro, Nakano, Takayuki

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 770 KB

english, 2013

37

Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p–i–n Homojunction Solar Cells

Sang, Liwen, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 543 KB

english, 2013

38

Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts

Nakano, Yoshitaka, Matsuki, Nobuyuki, Irokawa, Yoshihiro, Sumiya, Masatomo

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 784 KB

english, 2011

39

Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts

Nakano, Yoshitaka, Matsuki, Nobuyuki, Lozac’h, Mickael, Sakoda, Kazuaki, Sumiya, Masatomo

Journal:

MRS Proceedings

Année:

2011

Langue:

english

Fichier:

PDF, 706 KB

english, 2011

40

Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers

Matsumura, Hisashi, Kanematsu, Yasuo, Shimura, Takayoshi, Tamaki, Takayuki, Ozeki, Yasuyuki, Itoh, Kazuyoshi, Sumiya, Masatomo, Nakano, Takayuki, Fuke, Shunro

Journal:

Applied Physics Express

Année:

2009

Langue:

english

Fichier:

PDF, 854 KB

english, 2009

41

Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template

Sang, Liwen, Takeguchi, Masaki, Lee, Woong, Nakayama, Yoshiko, Lozac'h, Mickael, Sekiguchi, Takashi, Sumiya, Masatomo

Journal:

Applied Physics Express

Année:

2010

Langue:

english

Fichier:

PDF, 3.17 MB

english, 2010

42

HNO3 treatment of sapphire for management of GaN polarity in MOCVD method: Comparison of the properties of +c and –c GaN region

Takabe, Motoki, Sumiya, Masatomo, Fuke, Shunro

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 525 KB

english, 2003

43

Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures

Nakano, Yoshitaka, Irokawa, Yoshihiro, Sumiya, Masatomo, Sumida, Yasunobu, Yagi, Shuichi, Kawai, Hiroji

Journal:

MRS Proceedings

Année:

2014

Langue:

english

Fichier:

PDF, 772 KB

english, 2014

44

Electrical Characterization of Thick InGaN Films for Photovoltaic Applications

Nakano, Yoshitaka, Sang, Liwen, Sumiya, Masatomo

Journal:

MRS Proceedings

Année:

2014

Fichier:

PDF, 495 KB

2014

45

Determination of the surface band bending in In x Ga 1− x N films by hard x-ray photoemission spectroscopy

Lozac'h, Mickael, Ueda, Shigenori, Liu, Shitao, Yoshikawa, Hideki, Liwen, Sang, Wang, Xinqiang, Shen, Bo, Sakoda, Kazuaki, Kobayashi, Keisuke, Sumiya, Masatomo

Journal:

Science and Technology of Advanced Materials

Année:

2013

Langue:

english

Fichier:

PDF, 2.45 MB

english, 2013

46

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Sang, Liwen, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo

Journal:

Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 1.96 MB

english, 2015

47

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang, Liwen, Liao, Meiyong, Sumiya, Masatomo

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2013

48

Communication: The reason why +c ZnO surface is less stable than −c ZnO surface: First-principles calculation

Ito, Seitaro, Shimazaki, Tomomi, Kubo, Momoji, Koinuma, Hideomi, Sumiya, Masatomo

Journal:

The Journal of Chemical Physics

Année:

2011

Langue:

english

Fichier:

PDF, 699 KB

english, 2011

49

Fabrication of Highly Stable and Low Defect Density Amorphous Silicon Films at Low Substrate Temperature by Plasma Chemical Vapor Deposition Assisted with Piezoelectric Vibration

Sumiya, Masatomo, Kawasaki, Masashi, Ko\vcka, Jan, HideomiKoinuma,

Journal:

Japanese Journal of Applied Physics

Année:

1995

Fichier:

PDF, 647 KB

1995

50

Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

Nakano, Yoshitaka, Irokawa, Yoshihiro, Sumiya, Masatomo

Journal:

Philosophical Magazine Letters

Année:

2015

Langue:

english

Fichier:

PDF, 515 KB

english, 2015